RF 4H-SiC bipolar junction transistors

We report on the progress towards a silicon carbide (SiC) bipolar transistor aimed at operation at RF frequencies up to 3 GHz. Devices with a 5 /spl mu/m emitter stripe width were fabricated and tested on-chip with cascade probes and an HP8510C network analyzer. These devices have an f/sub t//f/sub max/ of 0.6/0.2GHz. To best of our knowledge the devices represent a first demonstration of an RF 4H-SiC BJT.