Thin-Film Al-Al2O3-Al Capacitors

A process has been developed to produce A1-Al
2
0
3
-Al capacitors with good yields and suitable properties for use in thin-film circuitry. Tests were conducted to determine the effects that a number of variables have on production yields and capacitor characteristics. This paper reports the optimum found for each variable. The largest improvement inyields was brought about by following proper cleaning procedures and controlling dust on the substrate prior to insertion in the vacuum system and during pumpdown.