Optimization of short-flow MOS charging monitor for ion implantation

Application of MOS capacitors for charging assessment is a widely accepted approach used by both process engineers and tool manufacturers. This paper presents results of optimizing short-flow on-wafer MOS capacitors with charge-collecting antennas to monitor charging caused by ion beams. The main factors considered during the optimization process include simplicity, testability, and sensitivity. Short-flow manufacturing of monitor wafers was developed to support the fast feedback "stick-and-test" approach.