Amorphous silicon back-plane electronics for OLED displays

Summary form only given. In this paper, we present amorphous silicon (a-Si:H) thin film transistor circuits that compensate for material shortcomings such as metastable threshold voltage shift and low mobility, and supply stable and predictable currents to drive organic light emitting diode (OLED) displays. We also discuss vertically stacked pixel architectures that enable high aperture ratio and high on-pixel integration with low parasitic capacitance and leakage current.