Regenerative Frequency Division with a GaAs FET

The circuit concept to be described accomplishes regenerative frequency division by employing a GaAs FET which is biased near pinchoff. The concept aims at efficient utilization of basic device characteristics, providing well-behaved divider performance and easy circuit designability. This is exemplified with the help of an experimental 16-to-8-GHz divider circuit whose output response is studied for single-tone CW, RF-pulsed, and two-tone CW excitations.