Effect of Doping Profile Variation on GaAs Hybrid and Double-Read IMPATT Diode Performance at 60 and 94 GHz

Doping profile parameters were varied in a computer optimization of hybrid and double-read GaAs IMPATT diodes at 60 and 94 GHz. The energy-momentum transport model was used to simulate each structure. Optimum results for the various structures that were studied are presented and compared.