Long Term Stability of DROs Compared to Crystal Oscillators

Guidelines are presented for GaAs FET DRO's which when followed result in the DRO's long term drift characteristics being similar to crystal oscillators. The guidelines fall into three categories: electrical stresses in the FET, fabrication issues of the DRO, and processing of the FET (a screening test for the GaAs FETs is described). Experimental data is included on a sample of units that support the proposed guidelines.