Broadband Monolithic Low-Noise Feedback Amplifiers

A 0.6 to 6 GHz monolithic GaAs FET low-noise feedback amplifier has been developed. This amplifier chip has a gain of 6 dB and a noise figure of around 4 dB over the bandwidth. Gains of 8 dB have been-achieved at 1/2I /sub dss/ with 1 dB gain compression points of 21 dBm over the band. This paper discusses the design of such amplifiers using as an example a 1 to 10 GHz two stage monolithic amplifier chip presently under development which is capable of being cascaded up to total gains of 50 dB or so with +- 1.5 dB ripple.