3-GHz 15-W Silicon Bipolar Transistors

Silicon bipolar transistors delivering 15-W CW output power with 4.8-dB gain and 38-percent collector efficiency have been developed at 3 GHz. The transistors have been fabricated by boron ion implantation for base region and arsenic diffusion from doped polysilicon for emitter region. Chemical dry-etching techniques for fine patterning and internal-matching techniques have been applied.