Submicrometer Self-Aligued GaAs MESFET (Short Papers)

This short paper presents a self-aligned technique which permits the production of submicrometer gate lengths and spacings between contacts. The exclusive use of standard photolithographic techniques makes this method interesting. Microwave measurements are reported for such a device with a 0.7-mu m gate length in a 2.2-mu m drain-source spacing. The yield of the process is usually better than 80 percent.