Broad-Band Small-Signal Impedance Characterization of Silicon (Si) P+-N-N+ Impatt Diodes

A method is described that permits a broad-band small-signal characterization of an IMPATT diode mounted in a package. From automatic-network-analyzer measurements on a package-shaped metal dummy, an empty package, and the diode under test biased below and above breakdown, the method allows first determination of a coupling-circuit parameter, bonding-wire inductance, and diode series resistance, and then evaluation of junction admittance above breakdown. Experimental results on silicon (Si) p+-n-n+ diodes over 2.5-15 GHz are shown. Nearly frequency-independent bonding-wire inductance is observed. Avalanche frequency squared (f/sub a//sup 2/) is found to be sublinear with respect to dc current density (I/sub d), possibly due to a variation of junction temperature (T/sub i/). An experimental formIda for (f/sub a//sup 2/) / (I/sub d) is obtained in terms of (T/sub i/).Detailed comparisons of the measured junction admittance with an existing analytical theory indicate a good agreement, if a suitable amount of saturation current is postulated, and also suggest that the estimated amount is in excess of the prebreakdown saturation current.