Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using β-Ga₂O₃ MOSFETs

The gate driver interfaces power MOSFETs with digital control circuits by providing the necessary drive current for rapid switching. This work demonstrates a monolithically integrated gate driver integrated circuit (IC) based on $\beta $ -Ga2O3 resistor-transistor logic (RTL) inverter, utilizing enhancement-mode multifinger (MF) MOSFETs and recessed epitaxy-based resistors. The 0.785-mm2 chip integrates two RTL inverters in a noninverting configuration and achieves voltage gains of 11.9 and 12.2 V/V with high/low noise margins of 3.4 /1.3 V and 3.0/1.6 V at a 15-V supply. Dynamic characterization shows a switching speed of $9.4~\mu $ s with a 5-V control input, producing output swings up to 15 V. These results validate the suitability of RTL-based gate drivers for $\beta $ -Ga2O3 power ICs and highlight their potential for scalable monolithic integration.