On a nonvolatile memory cell based on micro-electro-mechanics

An integrated micro-electro-mechanical nonvolatile memory cell is investigated. It essentially consists of a surface-micromachined bridge that is longitudinally stressed so that it buckled and becomes mechanically bistable. This bistable bridge performs the memory function. The read and write operation is performed by sensing the capacitance of the bridge and by electrostatically switching the bridge from one stable state into the other, respectively. The performance of such a device has been roughly estimated by a simple analytical model and experimental samples have been fabricated using a slightly adapted MOS process. The results appear promising.<
>