Unraveling the Influence of Temperature on Charge Dynamics in Quantum Dot Light-Emitting Diodes

The reliability and efficiency of quantum dot light-emitting diode (QLED) applications are strongly influenced by temperature, making it critical to understand how temperature affects charge dynamics and degradation mechanisms. In this work, we investigate the temperature dependence of key device parameters in QLEDs across a temperature range of −20°C to 85°C. For every 10°C increase, the external quantum efficiency decreases by ~0.65%, and the electroluminescence emission wavelength exhibits a red-shift of ~1.1 nm. Our results demonstrate that the decline in efficiency and stability at elevated temperatures is mainly attributed to the accumulation of excess electrons and the inhibition of exciton recombination. This study provides valuable insights into the degradation mechanisms, deepening our understanding of temperature-driven performance deterioration, which is crucial for the design of more durable and efficient QLEDs.