A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

A novel one transistor active pixel sensor (1T-APS) with extraordinary tunable sensitivity range is experimentally demonstrated using 22 nm fully depleted silicon-on-insulator (FD-SOI) technology. The proposed device enables independent control of both full well capacity and sensitivity. Two electrodes are connected to the substrate, with one used to form the depletion region beneath the buried oxide (BOX) and the other to tune the movement of photoelectrons. The experimental results show a record high tunable sensitivity range of 340000%, varying from 4 mV/( $\mu $ J/cm ${}^{{2}}\text {)}$ to 13.6 V/( $\mu $ J/cm ${}^{{2}}\text {)}$ . With tunable sensitivity, the dynamic range (DR) is expanded from 51.5 dB to 101.5 dB, making it promising for high-dynamic-range imaging applications.