A New Matrix Percolation Model for Dielectric Breakdown With Nonuniform Defect Generation

In this study, we propose a new matrix version of the existing dielectric breakdown (BD) percolation model for non-uniform defect generation. Its calculation framework is established utilizing the graph theory of discrete mathematical. This new model is verified by applying to the case of high-k/interfacial layer bilayer gate stack. Furthermore, we also demonstrate the potential of this model in its application to MOSFET’s off-state TDDB or other complex situations by incorporating the TCAD simulations. The flexibility and extensibility of the model is beneficial for further understanding the physical mechanisms of dielectric breakdown in general cases.