A Study on the Non-Linear Characteristics of Ohmic Contact Test Structures

This paper models and examines a 3D two-contact circular test structure in TCAD Sentaurus to highlight its non-linear characteristics, contrasting with the resistive-only model assumed by prior studies. The effects of voltage bias magnitude and polarity are significant when extracting the specific contact resistivity (SCR) of a metal-semiconductor (M-S) contact and must be accounted for. These effects align with the fundamental current-transport principles for the M-S interface. Practically, the paper produces sample plots that account for these effects, which can be used to determine SCR for various geometry dimensions and bulk resistivity profiles.