ZrO/sub 2/ and ZrO/sub 2//Y/sub 2/O/sub 3/ gate dielectrics prepared by evaporation and annealing processes

The electrical characteristics of MOS capacitors with ZrO/sub 2/ gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900/spl deg/C and that significant diffusion from the dielectric layer occur only at 1100/spl deg/C.