High frequency effects in MOSFET-CTow - Thomas biquads

The MOSFET-
C
version of the Tow-Thomas activeRC biquadratic filter operated at high frequencies is considered. Formulas for the deviation of quality factor and center frequency due to the finite gain-bandwidth product of the op amps and the intrinsic distributed- RC effects of the MOS transistors are presented and verified by computer simulation. Passive compensation methods are considered for eliminating the degradation of filter performance due to the above effects.