Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser

Theoretical and experimental results from an injection-locked semiconductor laser are reported. The measure deposition and size of the locking bandwidth compare favorably to those calculated using the authors' model of the injected laser. The effect of synchronization on the intensity level is pointed out. The usefulness of the technique in terms of modulation is estimated based on the behaviour, amplitude, and frequency of the relaxation oscillations which are the main limiting factor.<
>