Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers

The modulation characteristics of GaInAsP diode lasers grown on
p
-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on
n
-type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.