On the reliability of 1.3-µm InGaAsP/InP edge-emitting LED́s for optical-fiber communication

This study of the reliability of 1.3-μm double heterojunction edge-emitting LED's indicates that edge-emitting LED's mounted with Au
0.8
Sn
0.2
solder have an activation energy of 0.9 eV for degradation and extrapolated lifetimes of
2 \times 10^{8}
h at room temperature. A study of 1.3-μm LED's grown by LPE and VPE show them to be comparable in operating life. The temperature dependence of the light output (
P
) of the edge-emitting LED's is given by
P \alpha \exp
(
-\Delta T/75
K). The study also showed that lattice mismatch up to 0.31 percent at the InGaAsP/InP heterojunction does not effect reliability.