Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser

Theoretical and experimental work has been done to reduce the threshold current density J
th
of a GaAlAs/GaAs surface emitting junction laser emitting at a wavelength of 0.87 μm. The threshold current density J
th
has been obtained as a function of active layer thickness
d
and the reflectivity of the mirrors. The necessary reflectivity for threshold is 95 percent in the case of
d = 1-2 \mu
m to achieve
J_{th} = 25
kA/cm
²
at room temperature. In order to realize this high reflectivity without deteriorating the p-side ohmic contact, we have proposed a new surface emitting laser structure with a ring electrode for the p-side contact. Room temperature pulsed oscillation has been realized. The minimum threshold current was about 310 mA at room temperature under pulsed condition. The corresponding J
th
at the active layer is about 25 kA/cm
²
. This indicates that we have realized the high reflectivity. The maximum light output peak power was more than 5 mW. The beam was as sharp as 10° (FWHM) and linearly polarized. A single longitudinal mode was observed against the temperature variation of 80 K. Fabrication processes and some lasing performances are described.