Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λ
L
under CW operation showed a temperature coefficient (
d_{\lambdaL}/dT
) of 0.9 Å/°C for this DFB laser over the range of
10-90\deg
C. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.