Degradation modes in planar structure in0.53Ga0.47As photodetectors

Recoverable and nonrecoverable degradation modes have been found by forced degradation tests in In
0.53
Ga
0.47
As heterojunction photodetectors. In
0.76
Ga
0.24
As
0.55
P
0.45
cap layer and In
0.53
Ga
0.47
As light-absorption layer were grown by liquid-phase epitaxy (LPE) on a