The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm region

We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers (
5 \times 10^{14}-5 \times 10^{15}
/cm
³
) were grown both from undoped Ga rich solutions in the
300-375\deg
C range and by compensation using Ga-rich solutions at
\sim500\deg
C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for
C-V
profiling is also discussed.