Efficient luminescence band created in (Al, Ga)As multilayers by athermal laser processing

A new luminescence band is observed in (Al, Ga)As three-layer structures which were subjected to well-controlled CW Krion laser irradiation at power densities of 0.55 MW/cm
²
. The new band is shifted by 90 meV to lower energies with respect to the band-to-band recombination. The total photoluminescence efficiency at room temperature can be improved by as much as 80 percent. Measurements of the luminescence at 0.8 μm and of the infrared (IR) power emitted at 3.1 μm have been performed during processing. Maximum temperature rises of
320-350\deg
C for the laser heated zone have been evaluated from these measurements. The well-defined laser threshold power, necessary to create the new luminescence centers, does not depend on the substrate temperature in the range of
20-250\deg
C. It does increase linearly with decreasing laser photon energy.