Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)

Stripe-geometry In
1-x
Ga
x
P
1-z
As
z
(
x \approx 0.84-0.86, z \approx 0.38-0.42
) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs
1-y
P
y
substrates, are described that operate (CW, 77 K) in the visible at
\lambda \approx 6280-6360
Å with differential quantum efficiency
\eta_{ext} \sim 28
percent and power output in the range 1-7 mW.