Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - II: Lasers with etched mirrors

Monolithic CW lasers with low threshold are reported in which mesa stripes are embedded with vapor-phase-grown high-resistivity GaAsP layers and cavity mirrors are formed by chemical etching. An etching solution consisting of NaOH, H
2
O
2
, and NH
4
OH has turned out to offer excellently flat-cavity mirrors on