The influence of stress relaxation on charged walls in a

Planar domain configurations in a (100) garnet film [1] indicate the presence of inverse magnetostrictive anisotropies along boundaries between implanted and unimplanted regions of the film. Stress relief at such boundaries has been cited as an important factor in the formation of charged walls in (111) films [2]-[4]. The domains seen in this (100) film illustrate dramatically the effect of this stress relief. The stress is modeled as a uniaxial stress which gives rise to uniaxial anisotropies along the boundary. Because λ
₁₀₀
and λ
₁₁₁
are of different signs, the easy axis of magnetization is found to alternate perpendicular to and parallel to the boundary around an implanted disk. It is conjectured that (100) films with λ
₁₀₀
and λ
₁₁₁
of the same sign may successfully support charged walls suitable for bubble propagation.