Electrical and photoelectric properties of a-Si:H deposited by direct photo-CVD (for solar cell applications)

a-Si:H films were deposited by a direct photo-CVD (chemical vapor deposition) method with a XE resonance lamp (147 nm). The properties of these films were somewhat different from those obtained by conventional glow discharge (GD) methods. The low dark conductivity of the photo-CVD films (10/sup -11/ S/cm) indicates that the films are more intrinsic than GD films. The ratio of photo and dark conductivities reached 10/sup 6/ with good stability against light illumination. The films deposited by the photo-CVD method are promising materials for solar cells.<
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