A 1.0-ns 5-kbit ECL RAM

A bipolar 512/spl times/10-bit emitter-coupled logic (ECL) RAM with an access time of 1.0 ns and a power dissipation of 2.4 W, achieving an access-time power/bit product of 0.48 pJ/bit, has been developed. The RAM was fabricated using an advanced bipolar technology featuring poly-base self-alignment, poly-emitter shallow profile, and silicon-filled trench isolation with a minimum mask dimension of 1.2 /spl mu/m. A Schottky-clamped multiemitter cell with a cell size of 760 /spl mu/m/SUP 2/ is obtained as a result of compact cell layout and the use of 1.2-/spl mu/m trench isolation.