A 0.85-ns 1-kbit ECL RAM

A 1-kb ECL RAM with an address access time of 0.85 ns is described. This excellent performance is achieved by combining super self-aligned technology (SST) with 1-/spl mu/m design rules and high-speed circuit design. SST provides a narrow emitter stripe width of 0.5 /spl mu/m and a high cutoff frequency of 12.4 GHz at V/SUB CE/=3 V. A two-level metallization process is used. The minimum metallization pitches are 3 /spl mu/m in the first layer and 6 /spl mu/m in the second one. The chip size is 2.5/spl times/2.5 mm/SUP 2/ and the power dissipation is 950 mW. This RAM is promising for use in super computers and/or high-speed digital systems.