Base resistance of I/sup 2/L structures: its determination and its influence on upward current gain

A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transistor base and lateral base resistance in the n-p-n transistor. Methods for measuring the base resistance are outlined. The validity of the obtained model is demonstrated by measurement and simulation of two methods of measuring upward current gain.