A simple model of ion-implanted JFETs valid in both the quadratic and the subthreshold regions

A simple model is derived which describes the behavior of JFETs in the quadratic as well as in the subthreshold mode of operation. This model is characterized by the addition of one subthreshold parameter I/SUB 0/ and only one parameter K for the transition region, to the quadratic MOS model of Shichman and Hodges. The implementation in the program SPICE is discussed. Finally, the model is verified for a number of p-channel JFETs of a conventional bipolar p-JFET technology.