Circuit simulations of alpha-particle-induced soft errors in MOS dynamic RAMs

Sense-amplifier column and cell alpha particle hits have been simulated for a 64K MOS dynamic RAM using SPICE, a circuit simulation program. Simulations investigate the influence of circuit, timing, and layout on the possibility of alpha soft errors. The column to sense amplifier impedance is found to strongly influence the likelihood of soft errors. Results are useful for designing for alpha immunity.