CMOS/SOS EAROM memory arrays

A new low-voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10 V, conducts 400 /spl mu/A when programmed, and can be erased either electrically or with UV light. Using this cell, a family of memories have been built which dissipate only 50 /spl mu/W at 5 V, retain data for 17.3 years at 125/spl deg/C, and have a WRITE/ERASE endurance in excess of 300 cycles.