Modeling the dynamic behavior of I/sup 2/L

The validity of the charge control approach is checked for the normal (upward) operation of an I/SUP 2/L gate, leading to the conclusion that deviations are mainly due to the distributed nature of the base resistance. An alternative method is presented to determine the relevant device parameters, starting from experimental data. An equivalent model, incorporating the distributed base resistance, is proposed and verified by simulating the power delay characteristics of ring oscillators.