Polycrystalline silicon as a diffusion source and interconnect layer in I/sup 2/L realizations

Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I/SUP 2/L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.