High-performance transistors with arsenic-implanted polysil emitters

Integrated high-frequency transistors (f/SUB T/>3 GHz) with an arsenic implanted polysil emitter have been investigated. The results are compared with data of bipolar transistors made with the conventional planar technique. It is shown that better emitter efficiency higher current carrying capability, and improved emitter-base breakdown can be achieved for transistors with polysil emitters.