High-voltage SOS/MOS devices and circuit elements: Design, fabrication, and performance

High-voltage metal-oxide-semiconductor (HVMOS) transistors fabricated with low-voltage MOS circuits on the same silicon-on-sapphire (SOS) chip are critical for EAROM's and plasma display applications. An examination of the voltage limitations in conventional MOS is described. Several approaches to fabricating HVMOS transistors are analyzed, including the MOS tetrode, the extended drain MOST, and the double diffused MOST. Results of parameter tests on these devices are given and characteristics of HVMOS circuit elements discussed.