An application of device modeling to microwave power transistors

A new approach for modelling bipolar transistors in the microwave region under class-C conditions is presented. The following features were combined in the modelling procedure: 1) modelling at microwave frequencies, 2) modelling under large-signal class-C conditions, 3) modelling under mismatched conditions, and 4) correlation between measurements and modelling results. A model has been economically implemented and sufficient accuracy was obtained for: 1) device modelling over a range of operating conditions for which direct experimental characterization is not economically obtainable, 2) optimizing decisions for improved device fabrication, and 3) computer optimization of matching networks for microwave transistors.