Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

High performance InGaAs photodetectors are highly desired for the ever-growing photoelectric industry. Despite maturity at the production level, the underlying causes of noise and dark current need clarification for further improvement. We studied the dark current and noise characteristics in PIN In0.53Ga0.47As photodiodes with different mesa sizes. The dark current noise exhibits a clear spectral 1/
$f$
shape in all conditions. The results at low temperatures suggest that the dark current is dominated by the sidewall shunt paths while generation-recombination dark current comes into play at high temperatures. The noise intensity follows the squared leakage current in the temperature range of 100-240 K. Since the extracted activation energy of 1/
$f$
noise approximates that of the surface leakage current, suggesting that the surface leakage current may be the primary factor of the 1/
$f$
noise.