Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure

Magnetic skyrmions in synthetic antiferromagnet exhibit exceptional stability without stray field and transport bias, which holds significant potential in future memory, logic and artificial intelligent devices. However, achieving voltage control of synthetic antiferromagnetic (SAF) skyrmions poses challenges due to the thick and multi-layer film structure. Here, we design a double interface structure in a magnetic tunnel junction (MTJ) for voltage control of SAF skyrmions. The voltage applied for manipulating SAF skyrmions can be reduced by 50% compared to conventional single interface structure. In addition, the double interface structure allows for more compact device sizes, broader ranges of magnetic property parameters and lower energy consumption. Our studies provide a promising solution for the effective manipulation of antiferromagnetic skyrmion in SAF.