Reverse Recovery Enhanced and Single-Event Effects Hardened Power Schottky Source MOSFET With Integrated Retrograde p-Well Schottky Contact Super Barrier Rectifier

In this article, a new silicon power Schottky source MOSFET (S-MOS) architecture is proposed by introducing an integrated retrograde p-well Schottky contact super barrier rectifier (SBR), referred to as RP-SSBR-S-MOS. The introduced built-in Schottky contact SBR (SSBR) is a unipolar conduction device with a low forward conduction voltage that attenuates the minority carrier injection from the parasitic p-i-n body diode, resulting in excellent reverse recovery characteristics for the proposed RP-SSBR-S-MOS. In addition, by introducing a retrograde p-well structure and reducing the thin gate oxide length for the internal SSBR, the single-event gate rupture (SEGR) performance of the new MOSFET is significantly improved. Furthermore, the novel MOSFET replaces the ohmic contact N+ source with a Schottky contact between the P-body and the source metal, eliminating the parasitic BJT structure, resulting in excellent single event burnout (SEB) resistance. In summary, the proposed RP-SSBR-S-MOS not only exhibits excellent resistance to single-event effects (SEEs) (SEGR and SEB) but also demonstrates outstanding reverse recovery performance. The new concept of the proposed device and its characteristics are systematically analyzed with numerical TCAD simulations.