New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology

Flicker noise has become a critical issue in advanced FinFET technology with the rapid growth of analog/mixed-signal circuits. Due to the increasing variation of flicker noise, the applicability of conventional carrier and mobility fluctuation model faces challenges in the aspects of bias, frequency, and size dependences. In this article, we propose a method to separate the intertwined noise sources. Based on this method, the sources of flicker noise can be well clarified, enabling the modeling of different components independently. Considering the inelastic (de)trapping, quasi-ballistic transport, and access resistance (AR), the modeling method and feature are discussed. It is observed that ignoring noise sources other than oxide traps (OTs) can result in an underestimation of approximately 60% under operating conditions. In addition, the contribution of the OTs depends on the energy distribution of different types of traps. Their origins are also clarified by different characterization techniques and ab initio calculation. Therefore, this work is helpful to the variability-aware circuit design in advanced technology nodes.