Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture

Electrospinning-derived 1-D nanostructures have received extensive attention and are considered as one of the most promising building blocks in the next generation of electronic devices because of their excellent physical and chemical properties. Among many 1-D candidate materials, devices with In2O3 as the active channel are of highly representative, but In2O3 often leads to poor overall device performance due to its excessive carrier concentration. In current work, novel dual-channel field-effect transistors (FETs) based on electrospinning-driven In2O3 and ZnSnO (ZTO) nanofibers have been constructed and controlled carrier concentration and improved device performance has been detected. The experimental results have confirmed that In2O3/ZTO heterojunction FETs have demonstrated improved electrical performance compared to single-channel-based FET device, which can be attributed to the formation of 2-D electron gas (2DEG). To continue improving the electrical performance of FETs devices, the adhesion between nanofibers and the front channel interface at In2O3/SiO2 have been optimized by adding different volumes of ethanolamine (EA) to In2O3. As a result, it can be noted that the In2O3/ZTO heterojunction nanofiber FETs with 40-
$\mu \text{L}$
of EA have exhibited higher saturation field-effect mobility (
$\mu _{\text {sat}}$
) of 6.09 cm
$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$
, a smaller subtreshold swing (SS) of 0.49 V/decade, a lower interfacial state density (
${D}_{\text {it}}$
) of
$7.24\times 10^{{11}}$
cm
$^{-{2}}$
eV
$^{-{1}}$
, and excellent device stability (
$\Delta {V}_{\text {TH}}= {0.91}$
V). These findings further illustrated the remarkable progress of electrospinning-derived double-channel heterojunction transistors toward practical applications of low-cost and high-performance electronics in future.