Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction

Regular
$\beta$
-Ga2O3 nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photodetector of the
$\beta$
-Ga2O3 nanowire network/p-Si substrate. The photodetector exhibited excellent photodetection performance at room temperature, including a response/decay time of 30/20 ms, a high light on/off ratio of 5309, and a rectification ratio of 164.22, etc. The impact of the energy band structure between
$\beta$
-Ga2O3 nanowire and p-Si substrate, the large specific surface area and the optical trapping effect of nanowire network on the device performance were analyzed. Our research offers an original way to integrate
$\beta$
-Ga2O3 nanowires with the Si-based substrate.