Harmonic distortion due to narrow width effects in deep sub-micron SOI-CMOS device for analog-RF applications

The authors have investigated the reason for low-noise frequency degradation, frequency dispersion, and harmonic distortion in narrow width SOI MOSFETs with STI. As the channel width decreases, low-frequency noise characteristics, frequency dispersion and harmonic distortion deteriorate due to the larger influence of the interface state which is caused by interface roughness. They have also analyzed the unit circuits performance of VCO, RO, and single MOSFET amplifiers.