Performance limitation of sub-100-nm intrinsic-channel double-gate SOI MOSFETs

The double-gate silicon-on-insulator MOSFET has been receiving world-wide attention as the device with the highest potential in the nano-scale regime. In this paper, we estimate the drive current of single-gate, conventional DG, and intrinsic channel IC-DG SOI devices by simulations, and we discuss the intrinsic performance of various SOI devices.